Indium arsenide wafers are used in semiconductor infrared photosensitive sensors, photodiode-based thermal detectors, high-speed transistors, and Hall sensors and thermoelectric oscillators.
Crystal growth method;LEC
Diameter;50,5 – 76,2 mm 1000 mm
Conductivity type;R-type
Crystallographic orientation;<100>, <111>
Alloying impurity; –
Wafer Thickness;625-1000 mkm
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