Epitaxial silicon wafers are used in production of high performance microcircuits, radiation resistant electronics and discrete devices on metal-semiconductor contacts.
The main advantage of epitaxial silicon wafers as compared with monocrystalline silicon wafers is a p-n junction between device layer and the main part of substrate.

This allows to reduce leakage currents, parasitic phenomena between adjacent elements, and thus to reduce electric power consumed by the final products.